2SB631K Overview
·With TO-126 package ·plement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SB631 IC=-1mA; RBE=@ 2SB631K 2SB631 IC=-10µA ;IE=0 2SB631K IE=-10µA ;IC=0 IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-50V;.
