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2SB676 - SILICON POWER TRANSISTOR

Datasheet Details

Part number 2SB676
Manufacturer SavantIC
File Size 126.02 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB676 Datasheet

General Description

·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;

connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA, IB=0 IC=-3A ,IB=-6mA IC=-3A ,IB=-6mA VCB=-100V, IE=0 VEB=-5V;

IC=0 IC=-1A ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.