With MT-200 package
Complement to type 2SD845
High transition frequency
High breakdown voltage :VCEO=-150V(min) APPLICATIONS
For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and
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SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SB755
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DESCRIPTION ·With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High breakdown voltage :VCEO=-150V(min) APPLICATIONS ·For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -12 -1.
2SB755 Datasheet
