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SavantIC

2SB755 Datasheet Preview

2SB755 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With MT-200 package
·Complement to type 2SD845
·High transition frequency
·High breakdown voltage :VCEO=-150V(min)
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SB755
·
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-150
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SB755 Datasheet Preview

2SB755 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB755
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A; IB=0
-150
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
-2.0 V
VBE Base-emitter on voltage
IC=-5A ; VCE=-5V
-1.5 V
ICBO Collector cut-off current
VCB=-150V; IE=0
-50 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-50 µA
hFE DC current gain
IC=-1A ; VCE=-5V
55 160
fT Transition frequency
IC=-1A ; VCE=-10V
20 MHz
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
450 pF
hFE classifications
RO
55-110
80-160
2


Part Number 2SB755
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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