2SB860 Description
Product Specification Silicon PNP Power Transistors 2SB860 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; IC=0 IC=-1 A;IB=-0.1 A VCE=-80V; VCE=-4V 50 25 MIN -100 -4 -1.0 -100 -50 250 350 TYP.