2SB860
2SB860 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector Current: IC= -4A
- Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -1A
- High Collector Power Dissipation
- plement to Type 2SD1137
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
VCEO Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
-4
Collector Current-Peak
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
Junction Temperature
-5
1.8...
