Datasheet Details
| Part number | 2SB860 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SB860-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SB860.
| Part number | 2SB860 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SB860-INCHANGE.pdf |
|
|
|
·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·plement to Type 2SD1137 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.8 W 40 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB860 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB860 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB860 | Silicon PNP Transistor | Renesas |
| Part Number | Description |
|---|---|
| 2SB861 | PNP Transistor |
| 2SB863 | PNP Transistor |
| 2SB867 | PNP Transistor |
| 2SB868 | PNP Transistor |
| 2SB869 | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |