2SB860
2SB860 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220C package
- plement to type 2SD1137 APPLICATIONS
- Low frequency power amplifier TV vertical deflection output applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -45~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -4 -4 -5 1.8 W UNIT V V V A A
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50m A; RBE=: IE=-1m A; IC=0 IC=-1 A;IB=-0.1 A VCE=-80V; RBE=: VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50m A ; VCE=-4V 50 25 MIN -100 -4 -1.0 -100 -50 250 350 TYP. MAX UNIT V V V
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO h FE-1 h FE-2
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power...
