2SB860 Datasheet | Hitachi Semiconductor

Silicon PNP Triple Diffused Application Low frequency power amplifier TV vertical deflection output plementary pair with 2SD1137 Outline TO-220AB 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg Rating - 100 - 100 - 4 - 4 - 5 1.8 40 150 - 45 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min - 100 - 4 - - - 50 25 Note: 1. Pulse test Typ - - - - - - - Max - - - 100 - 50 - 1.0 250 350 Unit V V µA µA V Test conditions I C = - 10 m A, RBE = ∞ I E = - 1 m A, IC = 0 VCE = - 80 V, RBE = ∞ VEB = - 3.5 V, IC = 0 I C = - 1 A, IB = - 0.1 A- 1 VCE...