2SB861 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA; IC=0 IC=-0.5 A;IB=-50m A IC=-50mA ; VCE=-10V IE=0 ;VCB=-100V,f=1MHz 60 60 30 MIN -150...