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SavantIC

2SC3086 Datasheet Preview

2SC3086 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High breakdown voltage
: VCBO=800V(Min)
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·500V/3A switching regulator applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3086
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
PW4300µs, Duty Cycle410%
TC=25
VALUE
800
500
7
3
6
1
40
1.75
150
-55~150
UNIT
V
V
V
A
A
A
W




SavantIC

2SC3086 Datasheet Preview

2SC3086 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=B
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBE(sat) Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO Collector cut-off current
VCB=500V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=1.5A ; VCE=5V
fT Transition frequency
IC=0.3A ; VCE=10V
COB Output capacitance
f=10MHz ; VCB=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VCC=200V; IC=2A
IB1=0.4A;IB2=-0.4A;
RL=100F
hFE-1 classifications
LM
N
15-30
20-40
30-50
Product Specification
2SC3086
MIN TYP. MAX UNIT
500 V
800 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
18 MHz
40 pF
1.0 µs
3.0 µs
1.0 µs
2


Part Number 2SC3086
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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