• Part: 2SC3086
  • Description: NPN Triple Diffused Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 94.69 KB
Download 2SC3086 Datasheet PDF
SANYO
2SC3086
Features - High breakdown voltage (VCBO≥800V). - Fast switching speed. - Wide ASO. Package Dimensions unit:mm 2010C [2SC3086] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 800 500 7 3 6 1 1.75 40 Junction Temperature Tj Storage Temperature Tstg - 55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current ICBO VCB=500V, IE=0 Emitter Cutoff Current DC Current Gain IEBO h FE1 h FE2 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A 15- 8 Collector-to-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A Base-to-Emitter Saturation...