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2SC3087 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage (VCBO≥800V).
  • Fast switching speed.
  • Wide ASO. Package Dimensions unit:mm 2010C [2SC3087] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycl.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1011B NPN Triple Diffused Planar Silicon Transistor 2SC3087 500V/5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3087] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 800 500 7 5 10 2 1.