• Part: 2SC3088
  • Description: NPN Triple Diffused Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 92.89 KB
Download 2SC3088 Datasheet PDF
SANYO
2SC3088
Features - High breakdown voltage (VCBO≥800V). - Fast switching speed. - Wide ASO. Package Dimensions unit:mm 2022A [2SC3088] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 800 500 7 4 8 1.5 2.5 60 Junction Temperature Tj Storage Temperature Tstg - 55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage ICBO IEBO h FE1 h FE2 VCE(sat) VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A IC=1.5A, IB=0.3A 15- 8 Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A - : The h FE1 of the 2SC3088 is...