• Part: 2SC3089
  • Description: NPN Triple Diffused Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 94.18 KB
Download 2SC3089 Datasheet PDF
SANYO
2SC3089
Features - High breakdown voltage (VCBO≥800V). - Fast switching speed. - Wide ASO. Package Dimensions unit:mm 2022A [2SC3089] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 800 500 7 7 14 3 2.5 80 Junction Temperature Tj Storage Temperature Tstg - 55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current ICBO VCB=500V, IE=0 Emitter Cutoff Current DC Current Gain IEBO h FE1 h FE2 VEB=5V, IC=0 VCE=5V, IC=0.6A VCE=5V, IC=3A 15- 8 Collector-to-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.6A Base-to-Emitter Saturation Voltage VBE(sat) IC=3A,...