2SC3856 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A ;IB=0.5A VCB=200V ;IE=0 VEB=6V; VCE=12V 50 MIN 180 2SC3856 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE...