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SavantIC
SavantIC

2SC5199 Datasheet Preview

2SC5199 Datasheet

SILICON POWER TRANSISTOR

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2SC5199 pdf
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5199
DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1942
APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Emitter-base voltage
Open collector
Collector current
Base current
Collector power dissipation TC=25
Junction temperature
Storage temperature
VALUE
160
160
5
12
1.2
120
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC
SavantIC

2SC5199 Datasheet Preview

2SC5199 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC5199 pdf
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A
VBE
ICBO
IEBO
hFE-1
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=6A ; VCE=5V
VCB=160V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT Transition frequency
COB Collector output capacitance
IC=1A ; VCE=5V
f=1MHz;VCB=10V
hFE-1 classifications
RO
55-110
80-160
Product Specification
2SC5199
MIN TYP. MAX UNIT
160 V
2.5 V
1.5 V
5 µA
5 µA
55 160
35
30 MHz
170 pF
2


Part Number 2SC5199
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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