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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199
Power Amplifier Applications
2SC5199
Unit: mm
• High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C)
VCBO VCEO VEBO
IC IB
PC
160 V 160 V
5V 12 A 1.2 A
120 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-21F1A
temperature/current/voltage and the significant change in temperature, etc.
2SC5199 Datasheet
