The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5196
Power Amplifier Applications
2SC5196
Unit: mm
• Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C)
VCBO VCEO VEBO
IC IB
PC
80 V 80 V 5V 6A 0.6 A
60 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA TOSHIBA
― 2-16C1A
temperature, etc.
2SC5196 Datasheet
