2SC5196 Overview
Description
With TO-3P(I) package - Complement to type 2SA1939 APPLICATIONS - Power amplifier applications - Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 6 0.6 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=5 A;IB=0.5A IC=3A ; VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 MIN 80 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SC5196 TYP. MAX UNIT V 2.0 1.5 5 5 160 V V µA µA 30 75 MHz pF hFE-1 classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5196 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5196 4.
