Datasheet4U Logo Datasheet4U.com

2SD1406 - SILICON POWER TRANSISTOR

Description

With TO-220Fa package Collector power dissipation :PC=25W@TC=25 Low collector saturation voltage Complement to type 2SB1015 APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Fig.1 simplified outline (TO-220Fa) and sym

📥 Download Datasheet

Datasheet preview – 2SD1406

Datasheet Details

Part number 2SD1406
Manufacturer SavantIC
File Size 170.42 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SD1406 Datasheet
Additional preview pages of the 2SD1406 datasheet.

📁 Similar Datasheet

  • 2SD1406 - Silicon NPN Transistor (Toshiba)
  • 2SD1406 - NPN Transistor (INCHANGE)
  • 2SD1400 - NPN Transistor (INCHANGE)
  • 2SD1401 - NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR (Sanyo Semicon Device)
  • 2SD1402 - NPN Transistor (INCHANGE)
  • 2SD1403 - NPN Transistor (INCHANGE)
  • 2SD1403 - NPN Triple Diffused Planar Silicon Transistor (Sanyo)
  • 2SD1404 - Silicon NPN Power Transistor (INCHANGE)
  • 2SD1405 - Silicon NPN Transistor (Toshiba)
  • 2SD1405 - NPN Transistor (INCHANGE)
Other Datasheets by SavantIC

Full PDF Text Transcription

Click to expand full text
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 · www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Fig.1 simplified outline (TO-220Fa) and symbol Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 3 0.5 2.
Published: |