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SavantIC
SavantIC

2SD2257 Datasheet Preview

2SD2257 Datasheet

SILICON POWER TRANSISTOR

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2SD2257 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2257
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20F package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1495
·DARLINGTON
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
100
100
8
±3
±5
0.3
2.0
20
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

2SD2257 Datasheet Preview

2SD2257 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD2257 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2257
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=1.5mA
ICBO Collector cut-off current
VCB=100V ;IE=0
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
VECF
Diode forward voltage
IE=1A
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IB1=-IB2=1.5mA
VCC=30V ,RL=20A
Duty cycleB1%
MIN TYP. MAX UNIT
100 V
1.5 V
2.0 V
10 µA
0.8 4.0 mA
2000
2000
2.0 V
0.5 µs
2.0 µs
0.5 µs
2


Part Number 2SD2257
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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2SD2257 pdf
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