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SavantIC

BD231 Datasheet Preview

BD231 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD231
DESCRIPTION
www.dat·aWshiethet4TuO.co-1m26 package
·Complement to type BD230
·High current (Max:-1.5A)
·Low voltage (Max: -80V)
APPLICATIONS
·Drive stage in TV circuits
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
IBM Base current-Peak
PD Total power dissipation
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
Tamb Operating ambient temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb462
TC=25
VALUE
-100
-80
-5
-1.5
-3
-1
12.5
10
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
W




SavantIC

BD231 Datasheet Preview

BD231 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
VBE
ICBO
IEBO
hFE-1
hFE-2
hFE-3
fT
Collector-emitter saturation voltage IC=-1A; IB=-0.1A
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
Base-emitter on voltage
IC=-1A ; VCE=-2V
Collector cut-off current
VCB=-30V; IE=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-5mA ; VCE=-2V
DC current gain
IC=-150mA ; VCE=-2V
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-50mA ; VCE=-5V
Product Specification
BD231
MIN TYP. MAX UNIT
-0.8 V
-1.1 V
-1.3 V
-0.1 µA
-0.1 µA
40
40 250
25
50 MHz
2


Part Number BD231
Description SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

BD231 Datasheet PDF






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