Datasheet Details
| Part number | BDW84C |
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| Manufacturer | SavantIC |
| File Size | 175.56 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDW84C BDW84 Datasheet (PDF) |
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Overview: SavantIC Semiconductor Product Specification Silicon PNP Power.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BDW84C |
|---|---|
| Manufacturer | SavantIC |
| File Size | 175.56 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDW84C BDW84 Datasheet (PDF) |
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·With TO-3PN package www.datasheet4u.com ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW84/84A/84B/84C/84D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW84 BDW84A VCBO Collector-base voltage BDW84B BDW84C BDW84D BDW84 BDW84A VCEO Collector-emitter voltage BDW84B BDW84C BDW84D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 150 -65~150 V A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW84 BDW84A ICBO Collector cut-off current BDW84B BDW84C BDW84D BDW84 BDW84A ICEO Collector cut-off current BDW84B BDW84C BDW84D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=-6A ,IB=-12mA IC=-30mA, IB=0 www.datasheet4u.com BDW84/84A/84B/84C/84D SYMBOL CONDITIONS MIN -45 -60 -80 -100 -120 TYP.
MAX UNIT V -2.5 -4.0 -2.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V IC=-15A ,IB=-150mA IC=-6A ;
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BDW84C | PNP Transistor | INCHANGE |
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BDW84C | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMicroelectronics |
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BDW84C | PNP SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
| BDW84C | PNP SILICON POWER DARLINGTONS | Comset Semiconductors | |
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BDW84C | Bipolar PNP Device | Seme LAB |
| Part Number | Description |
|---|---|
| BDW84 | SILICON POWER TRANSISTOR |
| BDW84A | SILICON POWER TRANSISTOR |
| BDW84B | SILICON POWER TRANSISTOR |
| BDW84D | SILICON POWER TRANSISTOR |
| BDW83 | SILICON POWER TRANSISTOR |
| BDW83A | SILICON POWER TRANSISTOR |
| BDW83B | SILICON POWER TRANSISTOR |
| BDW83C | SILICON POWER TRANSISTOR |
| BDW83D | SILICON POWER TRANSISTOR |
| BDW42 | SILICON POWER TRANSISTOR |