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SavantIC

BU500 Datasheet Preview

BU500 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU500
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in large screen color
deflection circuits.
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
1500
700
5
6
16
4
75
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.66
UNIT
/W




SavantIC

BU500 Datasheet Preview

BU500 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU500
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A; IB=0;L=10mH
V(BR)EBO Emitter-base breakdown voltage
IE=100mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A;IB=2A
VBE Base-emitter on voltage
IC=4.5A;VCE=5V
ICBO Collector cut-off current
VCE=1000V;VBE=-2V
ICEX Collector cut-off current
VCE=1500V;VBE=-2V
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
Switching times
IC=1A ; VCE=5V
IC=4.5A ; VCE=5V
ts Storage time
tf Fall time
IC=4.5A ;IB1=-IB2=1.5A
VCC=100V ;
MIN TYP. MAX UNIT
700 V
5V
1.0 V
1.3 V
0.02 mA
1.0 mA
10 mA
8 36
3.0
1.2 µs
1.0 µs
2


Part Number BU500
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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