S2055AF Description
VCE=5V;f=5MHz 8 7 MIN 700 .. S2055AF SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V 1.0 1.3 1 2 300 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A.
| Part number | S2055AF |
|---|---|
| Download | S2055AF Datasheet (PDF) |
| File Size | 266.35 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
WS |
S2055AF | SILICON DIFFUSED POWER TRANSISTOR |
Toshiba |
S2055AF | Silicon NPN Triple Diffused Type TRANSISTOR |
Toshiba |
S2055A | Silicon NPN Transistor |
WS |
S2055A | SILICON DIFFUSED POWER TRANSISTOR |
Toshiba |
S2055 | Silicon NPN Transistor |
VCE=5V;f=5MHz 8 7 MIN 700 .. S2055AF SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V 1.0 1.3 1 2 300 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A.