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Savantic
Savantic

2N5883 Datasheet Preview

2N5883 Datasheet

Silicon PNP Power Transistors

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2N5883 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5883 2N5884
DESCRIPTION
·With TO-3 package
·Complement to type 2N5885 2N5886
·High power dissipations
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5883
2N5884
VCEO
Collector-emitter voltage
2N5883
2N5884
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-25
-50
-7.5
200
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W



Savantic
Savantic

2N5883 Datasheet Preview

2N5883 Datasheet

Silicon PNP Power Transistors

No Preview Available !

2N5883 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5883 2N5884
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5883
2N5884
IC=-0.2A ;IB=0
-60
-80
V
VCEsat-1 Collector-emitter saturation voltage IC=-15A; IB=-1.5A
VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-6.25A
VBEsat Base-emitter saturation voltage
IC=-25A ;IB=-6.25A
VBE Base-emitter on voltage
IC=-10A ; VCE=-4V
ICBO Collector cut-off current
VCB=ratedVCBO; IB=0
2N5883 VCE=-30V; IB=0
ICEO Collector cut-off current
2N5884 VCE=-40V; IB=0
ICEV
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCEO;
VCE=ratedVCEO; TC=150
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-3A ; VCE=-V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
hFE-3
DC current gain
IC=-25A ; VCE=-4V
fT Trainsistion frequency
IC=-1A ; VCE=-10V;f=1MHz
Ccb Collector base capacitance
IE=0; VCB=-10V;f=1MHz
Switching times
35
20
4
4
-1 V
-4 V
-2.5 V
-1.5 V
-1 mA
-2 mA
-1
mA
-10
-1 mA
100
MHz
500 pF
tr Rise time
ts Storage time
tf Fall time
IC=-10A ;IB1=- IB2=-1A
VCC=-30V
0.7 µs
1.0 µs
0.8 µs
2


Part Number 2N5883
Description Silicon PNP Power Transistors
Maker Savantic
Total Page 3 Pages
PDF Download
2N5883 pdf
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