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BD810 Datasheet Silicon PNP Power Transistors

Manufacturer: Savantic

Datasheet Details

Part number BD810
Manufacturer Savantic
File Size 87.06 KB
Description Silicon PNP Power Transistors
Download BD810 Download (PDF)

General Description

·With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC IB PD Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -80 -80 -5 -10 -6 90 150 -55~150 UNIT V V V A A W MAX 1.39 UNIT /W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BD810 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A;

IB=0 VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A VBE ICBO IEBO hFE-1 Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain IC=-4A ;

Overview

SavantIC Semiconductor Silicon PNP Power Transistors Product.