2SC2712
2SC2712 is NPN Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente
NPN Silicon General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
Features
- Power Dissipation PCM: 150 m W (Tamb=25 o C)
- Collector Current ICM: 150 m A
- Collector-Base Voltage V(BR)CBO: 60 V
- Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C
- Ro HS pliant Product o 1 3
3 Collector
Base
Dim A B
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
Emitter
H J K L S V
Top View G
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25o C
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE VCE(sat) f T Cob NF unless otherwise specified)
Test conditions MIN 60 50 5 0.1 0.1 70 0.1 80 2.0 1.0 3.5 10 700 0.25 V MHz p F d B TYP MAX UNIT V V V µA µA
Ic= 100µA , IE=0 IC=1m A , IB=0 IE= 100µA, IC=0 VCB= 60 V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2m A IC= 100m A, IB=10m A VCE=10V, IC= 1m A VCB=10V, IE=0,f=1 MHz VCE=6V,IC=0.1m A,f=1k Hz, Rg=10kΩ
CLASSIFICATION OF h FE
Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL http://.Se Co SGmb H.
Any changing of specification will not be informed individual
Free Datasheet http://../
01-Jun-2002 Rev. A
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