MMBT2907A Key Features
- Epitaxial Planar Die Construction
- plementary NPN Type Available
- Ideal for Medium Power Amplification and
- Emitter Voltage
- Base Voltage
- Base Voltage
- Continuous
- 40 -60
- 55 to +150
- Emitter Breakdown Voltage(3)
- Part: MMBT2907A
- Manufacturer: SeCoS Halbleitertechnologie GmbH (official site)
- Size: 266.79 KB
Other MMBT2907A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
MMBT2907A | PNP General Purpose Amplifier |
Cystech Electonics |
MMBT2907A | PNP Transistor |
STMicroelectronics |
MMBT2907A | SMALL SIGNAL PNP TRANSISTOR |
Diodes Incorporated |
MMBT2907A | 60V PNP SMALL-SIGNAL TRANSISTOR |
Micro Commercial Components |
MMBT2907A | PNP General Purpose Amplifier |
MMBT2907A Description
Elektronische Bauelemente MMBT2907A PNP Silicon General Purpose Transistor.