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MMBT2907A - General Purpose Transistor

Key Features

  • Epitaxial Planar Die Construction.
  • Complementary NPN Type Available (MMBT2222A).
  • Ideal for Medium Power Amplification and Switching RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free.

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Full PDF Text Transcription for MMBT2907A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMBT2907A. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente MMBT2907A PNP Silicon General Purpose Transistor FEATURES · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT2222A) · I...

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ar Die Construction · Complementary NPN Type Available (MMBT2222A) · Ideal for Medium Power Amplification and Switching RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free COLLECTOR 3 1 BASE 2 EMITTER V A L 3 Top View 12 G BS C 3 1 2 D H K J MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance