MMBT3906FW - PNP Silicon General Purpose Transistor

Features

Epitaxial Planar Die Construction.
Complementary NPN Type Available (MMBT3904FW).
Ideal for Medium Power Amplification and Switching RoHS Compliant Product A L Top View BS.

SeCoS

Datasheet Details

Part number	MMBT3906FW
Manufacturer	SeCoS
File Size	615.46 KB
Description	PNP Silicon General Purpose Transistor
Datasheet	MMBT3906FW Datasheet
Additional preview pages of the MMBT3906FW datasheet.

📁 Similar Datasheet

MMBT3906FA - PNP SMALL SIGNAL TRANSISTOR (Diodes)
MMBT3906FN3 - PNP GENERAL PURPOSE SWITCHING TRANSISTOR (Pan Jit International)
MMBT3906FZ - PNP SMALL SIGNAL TRANSISTOR (Diodes)
MMBT3906 - 40V PNP SMALL SIGNAL TRANSISTOR (Diodes)
MMBT3906 - PNP Transistor (CITC)
MMBT3906 - PNP Transistor (GOOD-ARK)
MMBT3906 - PNP General-Purpose Amplifier (ON Semiconductor)
MMBT3906 - SMALL SIGNAL PNP TRANSISTOR (STMicroelectronics)
MMBT3906 - PNP General Purpose Amplifier (Fairchild)
MMBT3906 - PNP Silicon Switching Transistor (Infineon Technologies AG)

Other Datasheets by SeCoS

MMBT3906 - PNP Plastic Encapsulated Transistor
MMBT3906-C - PNP Plastic Encapsulated Transistor
MMBT3906T - PNP Silicon General Purpose Transistors
MMBT3906W - General Purpose Transistor
MMBT3906Z - PNP Transistor
MMBT3906ZW - PNP Transistor
MMBT3906ZW-C - PNP Plastic Encapsulated Transistor
MMBT3904-C - NPN Transistor

Full PDF Text Transcription

Click to expand full text

Elektronische Bauelemente MMBT3906FW PNP Silicon General Purpose Transistor FEATURES · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904FW) · Ideal for Medium Power Amplification and Switching RoHS Compliant Product A L Top View BS COLLECTOR 3 3V 1 BASE 1 2 SOT-523 D 2 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3906FW = 3N, 2A Symbol VCEO VCBO VEBO

Published: Apr 19, 2016 |