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SDN2007-C SeCoS Dual-N Channel Enhancement Mode Power MOSFET

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Description The SDN2007-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a Uni-directional or Bi-directional load switch, facilitated by its common-drain configuration. DFN2x3-6J MARKING 2007 Lot Code PACKAGE INFORMATION Package MPQ DFN2×3-6J 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SDN2007-C...
Features ower Dissipation TA=25°C PD Lead Temperature for Soldering Purposes @1/8’’ from case for 10s TL Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Thermal Resistance from Junction to Ambient RθJA Top View Equivalent Circuit Rating 20 ±12 8 45 1.5 260 150, -55~150 Unit V V A A W °C °C 83.3 °C / W http...

Datasheet PDF File SDN2007-C Datasheet - 609.15KB
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SDN2007-C   SDN2007-C   SDN2007-C  



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