| Part Number | SDT3A5N06-C |
| Manufacturer | SeCoS |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for m... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
3A5N06
.
= Date code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6J
3K
Leader Size 7 inch
DFN2x2-6J
REF.
A B C D E F G
Millimeter Min. Max. 1.924...
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| Datasheet |
 SDT3A5N06-C Datasheet 332.68KB |
