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SDT3A5N06-C Datasheet - SeCoS

N-Channel Enhancement Mode Power MOSFET

SDT3A5N06-C Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0

SDT3A5N06-C General Description

The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved. .

SDT3A5N06-C Datasheet (332.68 KB)

Preview of SDT3A5N06-C PDF

Datasheet Details

Part number:

SDT3A5N06-C

Manufacturer:

SeCoS

File Size:

332.68 KB

Description:

N-channel enhancement mode power mosfet.
Elektronische Bauelemente SDT3A5 06-C 3.5A, 60V, RDS(O ) 100 mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” speci.

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SDT3A5N06-C N-Channel Enhancement Mode Power MOSFET SeCoS

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