SDT3A5N06-C
SDT3A5N06-C is N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The SDT3A5N06-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
3A5N06
.
= Date code
PACKAGE INFORMATION
Package
DFN2×2-6J
3K
Leader Size 7 inch
DFN2x2-6J
REF.
A B C D E F G
Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66
0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326
REF.
H I J K L M
Millimeter
Min. Max.
- 0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V...
