SDT3N03
SDT3N03 is Dual-N Enhancement Mode MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURES
Low RDS(on) trench technology Low thermal impedance Fast switching speed
DFN2x2-6L-J
APPLICATIONS
Battery-powered instruments Portable puting Mobile Phones GPS Units and Media Players
PACKAGE INFORMATION
Package
DFN2×2-6L-J
3K
Leader Size 7 inch
REF.
A B C D E F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75
0.30 Typ.
0.75 0.86 1.1
0.65BSC
REF.
G H J K L P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
-- 0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source...
