* Low RDS(on) trench technology Low thermal impedance Fast switching speed DFN2x2-6L-J APPLICATIONS Battery-powered instruments Portable Computing Mobile Phones GPS Units and Media Players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ
SDT3N03
SeCoS
338.08 KB
Dual-n enhancement mode mosfet.
Elektronische Bauelemente SDT3N03 3.5A, 30V, RDS(ON) 55 mΩ Dual-N Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen .
📁 Related Datasheet
SDT3005 N-Channel MOSFET (SeCoS)
SDT30100CT TRENCH SCHOTTKY RECTIFIER (Diodes)
SDT30100CTFP TRENCH SCHOTTKY RECTIFIER (Diodes)
SDT30100GCT 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT30100GCTFP 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT30120CT 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT30120CTFP 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT30150GCT 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT30150GCTSP 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
SDT3045VCT 30A TRENCH SCHOTTKY RECTIFIER (DIODES)
