SDT4A6N10ESV-C
SDT4A6N10ESV-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente
4.6A, 100V, RDS(ON) 59mΩ N-Ch Enhancement Mode Power MOSFET
RoHS pliant Product A suffix of “-C” specifies halogen and lead-free
Features
The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SDT4A6N10ESV-C meet the RoHS and Green Product requirement with full function reliability approved.
DFN2x2-6J
Features
- Advanced High Cell Density Trench Technology
- Super Low Gate Charge
- Green Device Available
- ESD Protection
MARKING
4A6N10
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= Date code
PACKAGE INFORMATION
Package
DFN2...
