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SID04N60-C Datasheet Preview

SID04N60-C Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SID04 60-C
4A , 600V , RDS(O ) 3
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode with a fast recovery
time. Designed for high voltage, high speed switching applications
such as power suppliers, converters, power motor control, and
bridge circuits.
FEATURES
High Current Rating
Lower RDS(ON)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
MARKING
04N60
Date Code
ORDER INFORMATION
Part Number
Type
SID04N60-C
Lead (Pb)-free and Halogen-free
TO-251
A
B
GE
K
F
C
D
H
MJ
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.35 6.80
4.90 5.50
2.15 2.40
0.43 0.90
6.50 7.50
7.20 9.65
REF.
G
H
J
K
M
P
2
Drain
Millimeter
Min. Max.
5.40 6.25
0.85 1.50
2.30 Typ.
0.60 1.05
0.50 0.90
0.43 0.62
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
ID
Continuous Drain-Source Diode Forward Current
Maximum Lead Temperature for Soldering Purposes@1/8’’ from case
for 5 seconds
IS
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient
RθJA
3
Source
Rating
600
±30
4
4
260
-55~150
100
Unit
V
V
A
A
°C
°C
°C/ W
http://www.SeCoSGmbH.com/
18-Oct-2017 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SID04N60-C Datasheet Preview

SID04N60-C Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SID04 60-C
4A , 600V , RDS(O ) 3
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min. Typ.
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Diode Forward Voltage 1
BVDSS
VSD
600
-
-
-
Drain-Source Leakage Current
Gate-Source Leakage Forward Current 1
Gate-Source Leakage Reverse Current 1
IDSS
-
-
IGSSF
-
-
IGSSR
-
-
On Characteristics 1
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VGS(th)
2
-
RDS(ON)
-
2
gfs - 2.6
Switching Characteristics
Total Gate Charge
Qg - 5
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qgs - 2.7
Qgd -
2
Turn-on Delay Time
Rise Time
Td(on)
Tr
-
-
12
7
Turn-off Delay Time
Fall Time
Td(off)
-
19
Tf - 10
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss - 540
Coss - 125
Reverse Transfer Capacitance
Crss
Note:
1. Pulse Test : Pulse width300µs, duty cycle2%.
-
8
Max.
-
1.5
25
100
-100
4
3
-
-
-
-
-
-
-
-
-
-
-
Unit Test condition
V VGS=0, ID=250µA
V VGS=0, IS=4A
µA VDS=600V, VGS=0
nA VDS=0V, VGS=30V
nA VDS=0V, VGS= -30V
V VDS=VGS, ID=250µA
Ω VGS=10V, ID=2A
S VDS=50V, ID=2A
VDS=480V
nC VGS=10V
ID=4A
VDD=300V
nS
VGS=10V
RG=9.1Ω
ID=4A
VDS=25V
pF VGS=0
f=1MHz
http://www.SeCoSGmbH.com/
18-Oct-2017 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SID04N60-C
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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