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SID04N60-C - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with a fast recovery time.

Features

  • High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified.

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Datasheet Details

Part number SID04N60-C
Manufacturer SeCoS
File Size 238.30 KB
Description N-Channel MOSFET
Datasheet download datasheet SID04N60-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SID04 60-C 4A , 600V , RDS(O ) 3Ω -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits.
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