* Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel MARKING: 05N10 Date code 1 Gate 2 Drain 3 Source A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55
SID05N10
SeCoS
2.14 MB
N-channel enhancement mode power mosfet.
Elektronische Bauelemente SID05N10 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.
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