SJP110SN04-C Overview
SJP110SN04-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Datasheet Details
| Part number | SJP110SN04-C |
|---|---|
| Datasheet | SJP110SN04-C-SeCoS.pdf |
| File Size | 250.56 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Shielded Gate Trench Power MOSFET |
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