SJP65SN10J-C
SJP65SN10J-C is N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
SJP65SN10J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
DFN5x6-8J
FEATURES
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability
APPLICATIONS
High side switch in POL DC/DC converter Secondary side synchronous rectifier
MARKING
CJAC 65SN10
= Production Line Indication
REF.
A B C D E F G
Millimeter
Min. Max.
5.65 5.85
5.95 6.15
4.80 5.40
0.45 TYP.
3.30 3.50
1.70 TYP.
REF.
H I J K L M N
Millimeter Min. Max.
1.27 TYP. 4.20 TYP. 0.38 0.50 0.38 0.50 0.34 0.48 0.254 REF. 1.03 1.17
PACKAGE INFORMATION
Package
DFN5x6-8J
5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SJP65SN10J-C Lead (Pb)-free and...
