Download SMG2306 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SMG2306
SMG2306 is N-Channel MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET RoHS pliant Product Description The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all mercial-industrial applications Features - Capable of 2.5V gate drive - Lower on-resistance - Reliable and Rugged Applications - Power Management in Notebook puter - Protable Equipment - Battery Powered System S Top View H Drain Gate Source SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10...