SMG2306A
SMG2306A is N-Channel MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente
5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET
RoHS pliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all mercial-industrial applications.
Features z Capable of 2.5V gate drive z Lower on-resistance
PACKAGE DIMENSIONS
B Top View
E D (Typ.)
Drain
Gate Source
REF.
A B C D E F
Millimeter
Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10 0.45 0.55
REF.
G H K J L M
Millimeter
Min. Max. 1.90...
