Download SMG2306NE Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SMG2306NE
SMG2306NE is N-Channel MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET RoHS pliant Product A suffix of ā€œ-Cā€ specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Features - Low RDS(on) provides higher efficiency and extends battery life. - Low gate charge - Fast switching - Miniature SC-59 surface mount package saves board space. APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as puters, printers, battery charger,...