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SMG2329P - P-Channel MosFET

Description

The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board space.
  • Fast switching speed.
  • High performance trench technology. K F SC-59 A L 3 Top View 1 E 2 CB 1 D G H 3 2 J.

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Datasheet preview – SMG2329P

Datasheet Details

Part number SMG2329P
Manufacturer SeCoS
File Size 117.54 KB
Description P-Channel MosFET
Datasheet download datasheet SMG2329P Datasheet
Additional preview pages of the SMG2329P datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2329P -2.5 A, -30 V, RDS(ON) 0.112  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology.
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