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SMG3314 Datasheet P-Channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

General Description

The SMG3314 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K

Overview

SMG3314 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240m£[ P-Channel Enhancement Mode Power Mos.

Key Features

  • Ultrahigh-Speed Switching.
  • 4V Drive.
  • Low On-Resistance Gate Source H J K H Drain L S D All Dimension in mm Marking : 3314 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -1.9 -1.5 -10 1.