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SMG3J14 Datasheet P-Channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SMG3J14 Elektronische Bauelemente -3.7A, -30V,RDS(ON) 85m£[ P-Channel Enhancement Mode Power Mos.

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General Description

The SMG3J14 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The SMG3J14 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.

S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G C H K Drain Gate Source D G J H J K L S

Key Features

  • High-Speed Switching.
  • Simple Drive Requirment.
  • Low On-Resistance All Dimension in mm D Marking : 3J14 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 ±20 -3.7 -3.0 -10 1.38 0.01 -55~+150 Unit.

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