SMS123 Datasheet - SeCoS

N-Channel MOSFET

SMS123 General Description

The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell.

SMS123 Datasheet (150.04 KB)

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SMS123

Manufacturer:

SeCoS

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150.04 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SMS123 0.17A, 100V, RDS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies haloge.

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SMS123 N-Channel MOSFET SeCoS

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SMS123 General Description

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