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SMS123 Datasheet Preview

SMS123 Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SMS123
0.17A, 100V, RDS(ON) 6
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMS123 is N-Channel enhancement MOS Field
Effect Transistor. Uses advanced trench technology and
design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load
switch and level shift.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
MARKING
B123
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
VDS
Gate – Source Voltage
Continuous Drain Current 1
VGS
ID
Pulsed Drain Current(tp=10µs)
IDM
Continuous Source-Drain Diode Current
IS
Power Dissipation
Thermal Resistance from Junction to Ambient 1
Lead Temperature for Soldering Purposes
(1/8’’ from case for 10s)
Operating Junction & Storage Temperature Range
PD
RθJA
TL
TJ, TSTG
http://www.SeCoSGmbH.com/
28-Apr-2017 Rev. C
Rating
100
±20
0.17
0.68
0.17
0.35
357
260
150, -55~150
Unit
V
V
A
A
A
W
°C / W
°C
°C
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SMS123 Datasheet Preview

SMS123 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SMS123
0.17A, 100V, RDS(ON) 6
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
100
-
-
-
-
-
-
1
10
Gate-Source Leakage
Gate-Threshold Voltage 2
Drain-Source On Resistance 2
Forward Transfer conductance 2
IGSS - - ±50
VGS(TH)
1 1.6 2.8
RDS(ON)
-
-
-6
- 10
gFS 80 -
Body-Drain Diode Ratings
-
Diode Forward On–Voltage
VSD - - 1.3
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
- 29 41
COSS
- 10 14
CRSS
- 2 2.8
Switching Characteristics 3
Total Gate Charge
QG(TOT)
- 1.4
Gate-to-Source Charge
QGS - 0.15
Gate-to-Drain Charge
QGD - 0.2
Turn-on Delay Time
Td(ON)
-8
Rise Time
Tr - 8
Turn-off Delay Time
Td(OFF)
- 13
Fall Time
Tf - 16
Notes:
1. Surface mounted on FR4 Board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300µs, duty cycle2
3. Switching characteristics are independent of operating junction temperature.
-
-
-
-
-
-
-
Unit
Test Conditions
V VGS=0V, ID=250µA
µA VDS=100V, VGS=0V
nA VDS=20V, VGS=0V
nA VDS=0V, VGS= ±20V
V VDS=VGS, ID=250µA
VGS=10V, ID=0.17A
VGS=4.5V, ID=0.17A
mS VDS=10V, ID= 0.17A
V IS=340mA, VGS=0V
VDS=25V,
pF VGS=0V,
f=1MHz
VDS=10V,
nC VGS=10V,
ID=0.22A
VDD=30V,
nS I D=0.28A,
VGS=10V,
RGEN=50
http://www.SeCoSGmbH.com/
28-Apr-2017 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SMS123
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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