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SMS3001-C - P-Channel Enhancement Mode Power MosFET

General Description

The SMS3001-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMS3001-C -4.3A, -30V, RDS(ON) 53mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3001-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS3001-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 3001 REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2.30 0.28 0.55 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.08 0.26 0.