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SMS8820 Datasheet Preview

SMS8820 Datasheet

N-CHANNEL MOSFET

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Elektronische Bauelemente
SMS8820
7A , 20V , RDS(ON) 21 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS8820 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD-protected.
This device is suitable for the use as a uni-directional or
bi-directional load switch, facilitated by its common-drain
configuration.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
8820
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1
IDM
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature Range
TJ, TSTG
Lead Temperature for Soldering Purposes@1/8’’
from case for 10s
TL
Notes:
1. Repetitive ratingPulse width limited by the junction temperature.
Rating
20
±12
7
25
417
150, -55~150
260
Unit
V
V
A
A
°C / W
°C
°C
http://www.SeCoSGmbH.com/
25-Nov-2015 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SMS8820 Datasheet Preview

SMS8820 Datasheet

N-CHANNEL MOSFET

No Preview Available !

Elektronische Bauelemente
SMS8820
7A , 20V , RDS(ON) 21 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
20
-
-
IDSS
-
-
1
Gate-Source Leakage Current
Gate-Threshold Voltage 1
IGSS
VGS(th)
-
-
±10
0.5
-
1.1
-
-
21
Static Drain-Source On-Resistance 1
-
-
24
RDS(ON)
-
-
28
-
-
32
Forward Transconductance 1
Diode Forward Voltage 1
-
-
50
gfs
9
-
-
VSD
-
-
1
Dynamic Parameters 2
Input Capacitance
Output Capacitance
Ciss
Coss
-
650
-
-
140
-
Reverse Transfer Capacitance
Crss
-
60
-
Total gate charge
Qg
-
8
-
Gate-source charge
Gate-drain charge
Qgs
-
2.5
-
Qgd
-
3
-
Switching Parameters 2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Td(on)
Tr
Td(off)
-
0.5
-
-
1
-
-
12
-
Fall Time
Tf
-
4
-
Notes:
1. Pulse Test : Pulse width300µs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
Unit
Test Condition
V VGS=0, ID=250µA
µA VDS=16V, VGS=0
µA VDS=0, VGS= ±10V
V VDS=VGS, ID=250µA
VGS=10V, ID=7A
VGS=4.5V, ID=6.6A
mVGS=3.8V, ID=6A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=2A
S VDS=5V, ID=7A
V IS=1A, VGS=0
VGS =0
pF VDS=10V
f=1MHz
VGS=4.5V
nC VDS=10V
ID=6A
VDD=10V
nS
VGS=5V
RGEN=3
RL=1.5
http://www.SeCoSGmbH.com/
25-Nov-2015 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 3



Part Number SMS8820
Description N-CHANNEL MOSFET
Maker SeCoS
Total Page 3 Pages
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