* RDS(on)≦3.6mΩ @VGS= -10V RDS(on)≦5.6mΩ @VGS= -4.5V High speed powerh switching, Logic Level Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested PR-8PP Package MARKING 80P30SG Date Code REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2
SPR80P30SG Datasheet (661.67 KB)
SPR80P30SG
SeCoS
661.67 KB
P-ch enhancement mode power mosfet.
Elektronische Bauelemente SPR80P30SG -30A, -80V, RDS(O ) 3.6mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .
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