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Elektronische Bauelemente
SS8550T
PNP Silicon General Purpose Transistor
FEATURES
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation PCM : 1 W
Collector Current ICM : -1.5 A
Collector-base voltage V(BR)CBO : - 40 V
Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C
1 2 3
1
2
3
1 23
1. EMITTER 2. BASS 3 . COLLECTOR
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -100ȰAđ IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.