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SSD10N10J-C - N-Ch Enhancement Mode Power MOSFET

SSD10N10J-C Description

Elektronische Bauelemente SSD10N10J-C 10A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.
The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for mos.

SSD10N10J-C Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD10N10J-C Lead (Pb)-free and Halogen-fr

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Datasheet Details

Part number
SSD10N10J-C
Manufacturer
SeCoS
File Size
397.37 KB
Datasheet
SSD10N10J-C-SeCoS.pdf
Description
N-Ch Enhancement Mode Power MOSFET

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N-Ch Enhancement Mode Power MOSFET SeCoS
SeCoS SSD10N10J-C-like datasheet