SSD10N10J-C Datasheet PDF - SeCoS N-Ch Enhancement Mode Power MOSFET Specs

SSD10N10J-C - N-Ch Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Features

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available.

Datasheet Details

Part number	SSD10N10J-C
Manufacturer	SeCoS
File Size	397.37 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSD10N10J-C Datasheet
Additional preview pages of the SSD10N10J-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSD10N10J-C 10A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.

Published: May 28, 2024 |