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SSD10N10J-C SeCoS N-Ch Enhancement Mode Power MOSFET

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Description The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Pa...
Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available MARKING 10N10J Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD10N10J-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless other...

Datasheet PDF File SSD10N10J-C Datasheet - 397.37KB
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