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SSE55N03 - N-Channel Enhancement Mode Power MosFET

General Description

The SSE55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.

Key Features

  • z z z z Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSE55N03 Elektronische Bauelemente 55 A, 25 V, RDS(ON) 6 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z z Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching PACKAGE DIMENSIONS REF. A b c D www.DataSheet.co.kr Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4.80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.17 13.25 2.60 3.71 2.60 1.